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CYStech Electronics Corp.
Small Signal Schottky diode
Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 1/3
RB751S-40C2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package.
Features
*Extremely small surface mounting type.(SC-79/SOD523) *Low reverse current and low forward voltage *High reliability
Applications
Low current rectification and high speed switching
Symbol
RB751S-40C2
Outline
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature Tstg .................................................................................................... -45~+125C Junction Temperature Tj .............................................................................................................. +125C * Maximum Voltages and Currents (Ta=25C) Peak Reverse Voltage VRM..................................................................................... 40 V DC Reverse Voltage VR ...................................................................................................................... 30 V Mean Rectifying Current IF ........................................................................................................... 30 mA Peak Forward Surge Current IFSM......................................... ..............................................200 mA
RB751S-40C2
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Characteristic Forward Voltage Reverse Leakage Current Capacitance Between Terminals Symbol VF IR CT IF=1mA VR=30V VR=1V, f=1MHz Condition Min. -
Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 2/3
Typ 2
Max. 370 0.5 -
Unit mV A pF
Characteristic Curves
Forward Current Derating Curve
120 Percentage of Rated Forward Current---(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 Ambient Temperature---TA() 100
Forward Current vs Forward Voltage
Forward Current---I F(mA)
M ounting on glass epoxy PCBs
T yp. pulse measurement 10 125 1 75 0.1 25 - 25
Forward Voltage---VF(V)
Reverse Leakage Current vs Reverse Voltage
100
Capacitance vs Reverse Voltage
10 Capacitance between terminals---C T(pF)
Reverse Leakage Current---IR(A)
10
T a= 125 T a= 75
f=1MHz Ta=25
1
0.1 T a= 25 0.01 Typ. pulse easurement 0.001 0 10 20 30 Reverse Voltage---VR(V) Ta=-25
1 0 2 4 6 8 10 12 14 Reverse Voltage---VR(V)
RB751S-40C2
CYStek Product Specification
CYStech Electronics Corp.
SOD-523 Dimension
Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 3/3
Marking Code :
1
5
2
1
2
Style : Pin 1. Cathode 2. Anode 2-lead SOD-523 Plastic Package CYStek Package Code : C2
*: Typical
DIM A bp c D
Material:
Millimeters Min 0.5 0.25 0.1 1.1 .Max. 0.7 0.35 0.2 1.3
DIM E HE V
Millimeters Min. 0.7 1.5 0.15(typ) Max. 0.9 1.7
Notes: 1.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
2.If there is any question with packing specification or packing method, please contact your local CYStek sales office. * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
RB751S-40C2
CYStek Product Specification

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